Characterization of ohmic and Schottky contacts on SiC

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 637-641

  Kakanakova Georgieva, A ^a   Marinova, Ts ^a   Noblanc, O ^b   Arnodo, C ^b   Cassette, S ^b   Brylinski, C ^b  

^a INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

^b THALES   (France)

Author keywords

Contacts; Depth profiling; Nickel; Silicon carbide; Tungsten; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; DEPOSITION; DIFFUSION IN SOLIDS; NICKEL; OHMIC CONTACTS; SILICON CARBIDE; SURFACE CHEMISTRY; TUNGSTEN; TUNGSTEN CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY CONTACTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032631439     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01668-X     Document Type: Article

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