Metals on 6H-SiC: Contact formation from the materials science point of view

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 357-362

  Goesmann, Fred ^a   Schmid Fetzer, Rainer ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Materials science; Metal contacts; Silicon carbide

Indexed keywords

ANNEALING; BACKSCATTERING; MORPHOLOGY; OHMIC CONTACTS; PHASE DIAGRAMS; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CONTACT FORMATION; METAL CONTACTS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0031124797     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02005-3     Document Type: Article

References (7)

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4. F. Goesmann and R. Schmid-Fetzer, Temperature dependent interface reactions and electrical contact properties of titanium on 6H-SiC, Semiconduct. Sci. Technol., 10 (1995) 1652-1658, 11 (1996) 461.
5. F.J.J. van Loo and K. Osinski, Periodic structures in multicomponent diffusion couples, Proc. Int. Simp. Fundamentals and Applications of Ternary Diffusion, Hamilton, Ontario, Canada, 1990, pp. 109-118.
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7. M.R. Rijnders, A.A. Kondentsov, J.A. van Beek and F.J.J. van Loo, Periodic layered morphology resulting from solid state reactions,in R.Y. Lin et al. (eds.), Design Fundamentals of HighTemperature Composites, Intermetallics and Ceramic Systems, TMS, 1995, pp. 153-167.