The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 254-258

  Rastegaeva, M G ^a   Andreev, A N ^a   Petrov, A A ^a   Babanin, A I ^a   Yagovkina, M A ^a   Nikitina, I P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Nickel; Ohmic contact; Schottky diodes; Silicon carbide

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; HETEROJUNCTIONS; NICKEL; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

NICKEL SILICIDE;

SCHOTTKY BARRIER DIODES;

EID: 0043043861     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01989-7     Document Type: Article

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