Novel dual-metal gate technology using Mo-MoSix combination

IEEE Transactions on Electron Devices

Volumn 53, Issue 6, 2006, Pages 1420-1426

  Li, Tzung Lin ^a   Ho, Wu Lin ^a   Chen, Hung Bin ^a   Wang, Howard C H ^b   Chang, Chun Yen ^a   Hu, Chenming ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Dual metal gate; Molybdenum; Silicide; Thermal stability

Indexed keywords

DIELECTRIC MATERIALS; ION IMPLANTATION; MOLYBDENUM COMPOUNDS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THERMODYNAMIC STABILITY;

DUAL-METAL GATE TECHNOLOGY; GATE ELECTRODES; TRANSISTOR STRUCTURES;

GATES (TRANSISTOR);

EID: 33744792081     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.874227     Document Type: Article

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