Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 299-302

  Park, Chang Seo ^a   Cho, Byung Jin ^a   Tang, Lei Jun ^b   Kwong, Dim Lee ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL PINNING; FULLY SILICIDED (FUSI) METAL GATES; LEAKAGE CURRENT DISTRIBUTION; TEMPERATURE ANNEALING; ALUMINUM METAL; FULLY SILICIDED METAL GATE; GATE STRUCTURE; K DIELECTRICS; LOW TEMPERATURE ANNEALING; METAL-GATE; NMOSFETS; SUBSTITUTED ALUMINUM GATES;

ACTIVATION ANALYSIS; ALUMINUM; ANNEALING; DIELECTRIC MATERIALS; DOPING (ADDITIVES); FERMI LEVEL; LEAKAGE CURRENTS; MODULATION; OXIDATION; PHOSPHORUS; POLYSILICON; TITANIUM; GATE DIELECTRICS; HIGH-K DIELECTRIC; MOSFET DEVICES; SILICIDES; WORK FUNCTION;

GATES (TRANSISTOR); TEMPERATURE;

EID: 21744442239     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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