Dual-metal gate technology for deep-submicron CMOS transistors

Digest of Technical Papers-Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 72-73

  Lu, Qiang ^a   Yeo, Yee Chia ^a   Ranade, Pushkar ^a   Takeuchi, Hideki ^a   King, Tsu Jae ^a   Hu, Chenming ^a   Song, S C ^a,b   Luan, H F ^a,b   Kwong, Dim Lee ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRODES; GATES (TRANSISTOR); MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

CMOS INTEGRATED CIRCUITS;

EID: 0033700304     PISSN: 07431562     EISSN: None     Source Type: Journal    
DOI: 10.1109/VLSIT.2000.852774     Document Type: Article

References (4)

1. P. Ranade Molybdenum as a gate electrode for deep-submicron CMOS technology MRS Meeting MRS Meeting 2000
2. S. C. Song Ultra thin (<20Å) CVD Si3N4 gate dielectric for deep-sub-micron CMOS devices IEDM 373 IEDM 1998
3. K. Yang Quantum effect in oxide thickness determination from capacitance measurement Symposium on VLSI Technology 77 Symposium on VLSI Technology 1999
4. K. Chen Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects IEEE Trans. Elect. Dev. 44 1951 1997