Highly reliable HfSiON CMOSFET with phase controlled NiSi (NFET) and Ni3Si (PFET) FUSI gate electrode

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 68-69

  Terai, Masayuki ^a   Takahashi, Kensuke ^a   Manabe, Kenzo ^a   Hase, Takashi ^a   Ogura, Takashi ^a   Saitoh, Motofumi ^a   Iwamoto, Toshiyuki ^a   Tatsumi, Toru ^a   Watanabe, Hirohito ^a  

^a NEC CORPORATION   (Japan)

Author keywords

CMOS; Fermi level pinning; FUSI; HfSio; NiSi

Indexed keywords

COMPOSITION; ELECTRIC INSULATORS; ELECTRODES; FERMI LEVEL; LEAKAGE CURRENTS; MOSFET DEVICES; PHASE CONTROL;

FERMI LEVEL PINNING; FUSI; HFSIO; NISI;

CMOS INTEGRATED CIRCUITS;

EID: 29244451347     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469215     Document Type: Conference Paper

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