Continuous and precise work function adjustment for integratable dual metal gate CMOS technology using Hf-Mo binary alloys

IEEE Transactions on Electron Devices

Volumn 52, Issue 6, 2005, Pages 1172-1179

  Li, Tzung Lin ^a   Hu, Chia Hsin ^a   Ho, Wu Lin ^a   Wang, Howard C H ^b   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Alloy; CMOS; Hafnium (Hf); Intermixing; Metal gate; Molybdenum (Mo); Work function

Indexed keywords

BINARY ALLOYS; GATES (TRANSISTOR); HAFNIUM; MOLYBDENUM; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY;

METAL GATE; METAL INTERMIXING; WORK FUNCTION;

CMOS INTEGRATED CIRCUITS;

EID: 21044443770     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.848108     Document Type: Article

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