Initial silicide formation process of Mo/(100) Si system prepared using an ultrahigh-vacuum sputtering system

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 84, Issue 3, 2001, Pages 71-78

  Ohishi, Naoya ^a   Yanagisawa, Hideto ^a   Sasaki, Katsutaka ^a   Abe, Yoshio ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Effect of impurities; High vacuum; Initial formation of silicides; Multiphase silicide; Ultrahigh vacuum

Indexed keywords

DIFFUSION; ELECTRON SPECTROSCOPY; LOW TEMPERATURE EFFECTS; SILICATES; SPUTTERING; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

MULTIPHASE SILICIDES;

FILM PREPARATION;

EID: 0035276501     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/1520-6432(200103)84:3<71::AID-ECJB8>3.0.CO;2-O     Document Type: Article

References (22)

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4. Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh-vacuum-deposited V and Zr thin films on (111) Si
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15. Auger and photoelectron line energy relationships in aluminum-oxygen and silicon-oxygen compounds
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