Raman spectroscopy study of heavy-ion-irradiated α-SiC

Journal of Physics Condensed Matter

Volumn 18, Issue 22, 2006, Pages 5235-5251

  Sorieul, S ^a   Costantini, J M ^a   Gosmain, L ^b   Thome L ^c   Grob, J J ^d  

^a SRMA   (France)

^b CEA SACLAY   (France)

^c CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

^d Faculté de Médecine   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; RAMAN SPECTROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; STABILITY;

HOMONUCLEAR BONDS; RAMAN LINE INTENSITIES; SI-C BONDS;

HEAVY IONS;

EID: 33744481270     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/22/022     Document Type: Article

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