Thermal recovery of amorphous zones in 6H-SiC and 3C-SiC induced by low fluence 420 keV Xe irradiation

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 269-276

  Bus, T ^a   Van Veen, A ^a   Shiryaev, A ^a,b   Fedorov, A V ^a   Schut, H ^a   Tichelaar, F D ^a   Sietsma, J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

Author keywords

Amorphization; Positrons; Radiation damage; SiC; Thermal recovery

Indexed keywords

AMORPHIZATION; ANNEALING; ION IMPLANTATION; IRRADIATION; POSITRONS; SILICON CARBIDE; XENON;

THERMAL RECOVERY;

AMORPHOUS SILICON;

EID: 0041930979     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00712-2     Document Type: Conference Paper

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