Radiation damage and annealing behaviour of Ge+-implanted SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 177-180

  Pacaud, Y ^a   Stoemenos, J ^b   Brauer, G ^a   Yankov, R A ^a   Heera, V ^a   Voelskow, M ^a   Kogler R ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTAL DEFECTS; CRYSTALLIZATION; EPITAXIAL GROWTH; ION BOMBARDMENT; ION IMPLANTATION; MICROSCOPIC EXAMINATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION; POSITRON ANNIHILATION SPECTROSCOPY;

SILICON CARBIDE;

EID: 0030566533     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00504-6     Document Type: Article

References (7)

1. Y. Pacaud, W. Skorupa, A. Perez-Rodriguez, G. Brauer, J. Stoemenos and R.C. Barklie, Nucl. Instr. and Meth. B 112 (1996) 321.
2. G.L. Harris, ed., Properties of Silicon Carbide, Mater. Sci, Res. Centre of Excellence, Howard Univ., Washington, DC (INSPEC, IEE, London, 1995).
3. Y.A. Vodakov and E.N. Mokhov, in: Silicon Carbide, eds. R.C. Marshall, J.W. Faust, Jr. and C.E. Ryan (University of South Carolina Press, Columbia, 1974) p. 508.
4. C.J. McHargue and J.M. Williams, Nucl. Instr. and Meth. B 80/81 (1993) 889.
5. G. Brauer, W. Anwand, P.G. Coleman, A.P. Knights, F. Plazaola, Y. Pacaud, W. Skorupa, J. Störmer and P. Willutzki, Phys. Rev. B (in press).
6. V. Heera, J. Stoemenos, R. Kögler and W. Skorupa, J. Appl. Phys. 77 (1995) 2999.
7. V. Heera, R. Kögler, W. Skorupa and J. Stoemenos, Appl. Phys. Lett. 67 (1995) 1999.