Defect structure and evolution in silicon carbide irradiated to 1 dpa-SiC at 1100 °C

Journal of Nuclear Materials

Volumn 317, Issue 2-3, 2003, Pages 145-159

  Senor, D J ^a   Youngblood, G E ^a   Greenwood, L R ^a   Archer, D V ^a   Alexander, D L ^a   Chen, M C ^b   Newsome, G A ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; IRRADIATION; THERMAL CONDUCTIVITY; THERMAL DIFFUSION; TRANSMISSION ELECTRON MICROSCOPY;

ISOCHRONAL ANNEALING;

SILICON CARBIDE;

EID: 0037403359     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(03)00077-1     Document Type: Article

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