Nanostructured SiC films obtained by neutral-cluster depositions

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 24, 1998, Pages 16481-16490

  Melinon P ^a   Keghelian P ^a   Perez, A ^a   Ray, C ^a   Lerme J ^a   Pellarin, M ^a   Broyer, M ^a  

^a UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038307804     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.16481     Document Type: Article

References (36)

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31. Electronic structure of saturated zinc-blende-structure spherical clusters (Formula presented) have been calculated using a nearest-neighbor empirical tight-binding (TB) Hamiltonian. The parameters were fitted in order to produce accurately the valence and the lowest conduction bands of bulk SiC. The TB model involves five basis orbitals per Si- or C-site: s, (Formula presented) and (Formula presented) The various on-site and hopping parameters (13 for zinc-blende structure) are tabulated [P. Vogel et. al J. Phys. Chem. Solids 44, 365 (1983)].
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