The effects of flux, fluence and temperature on amorphization in ion implanted semiconductors

Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8285-8289

  Carter, G ^a  

^a UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000320137     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362468     Document Type: Review

References (25)

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