Analysis of ion beam induced damage and amorphization of 6H-SiC by Raman scattering

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 541-547

  Perez Rodriguez A ^a   Pacaud, Y ^b   Calvo Barrio, L ^a   Serre, C ^a   Skorupa, W ^b   Morante, J R ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

6H SiC; Amorphization; Damage; Ion implantation; Raman scattering; Recrystallization

Indexed keywords

EID: 0001722253     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666633     Document Type: Article

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