Annealing temperature dependence of TiB 2 Schottky barrier contacts on n-GaN

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 658-662

  Khanna, Rohit ^a   Pearton, S J ^a   Ren, F ^a   Kravchenko, I ^b  

^a University of Florida   (United States)

^b University of Florida   (United States)

Author keywords

GaN; Schottky barrier height; Thermal stability

Indexed keywords

DEPOSITION CHAMBER; LIMITED TI DIFFUSION; MEASURABLE DEPENDENCE; SCHOTTKY BARRIER HEIGHT;

METALLIZING; OXIDATION; POWER AMPLIFIERS; SCHOTTKY BARRIER DIODES; TEMPERATURE MEASUREMENT; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS;

GALLIUM NITRIDE;

EID: 33646718604     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0116-y     Document Type: Conference Paper

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