Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

Applied Physics Letters

Volumn 73, Issue 26, 1998, Pages 3917-3919

  Yu, L S ^a   Xing, Q J ^a   Qiao, D ^a   Lau, S S ^a   Boutros, K S ^b   Redwing, J M ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Epitronics/ATMI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18644377686     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122935     Document Type: Article

References (14)

1. M. Asif Khan, M. S. Shur, and Q. Chen, Appl. Phys. Lett. 68, 3022 (1996).
2. Q. Chen, M. Asif Khan, J. W. Yang, C. J. Sun, M. S. Shur, and H. Park, Appl. Phys. Lett. 69, 794 (1996).
3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Chap. 5.
4. C. H. Chen, S. M. Baier, D. K. Arch, and M. S. Shur, IEEE Trans. Electron Devices 35, 571 (1988).
5. R. H. Fowler, Phys. Rev. 38, 45 (1931).
6. C. R. Crowell, W. G. Spitzer, L. E. Howarth, and E. E. Labate, Phys. Rev. 127, 2006 (1962).
7. E. O. Lawrence and L. B. Linford, Phys. Rev. 36, 482 (1930).
8. A. C. Schmitz, A. T. Ping, M. A. Khan, and Q. Chen, Electron. Lett. 32, 1832 (1996).
9. Q. Z. Liu, L. S. Yu, F. Deng, S. S. Lau, and J. M. Redwing, J. Appl. Phys. 84, 881 (1998).
10. R. A. Smith, Wave Mechanics of Crystalline Solids (Chapman and Hall, London, 1961), p. 49.
11. K. Kim, W. R. L. Lambrecht, B. Segall, and M. V. Schilfgaarde, Phys. Rev. B 56, 7363 (1997).
12. M. W. Wang, J. O. McCaldin, J. F. Swenberg, T. C. McGill, and R. J. Hauenstein, Appl. Phys. Lett. 66, 1974 (1995).
13. G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 65, 610 (1994).
14. E. A. Albanesi, W. R. Lambrecht, and B. Segall, J. Vac. Sci. Technol. B 12, 2470 (1994).