Characterization of rhenium Schottky contacts on n-type AlxGa1-xN

Electronics Letters

Volumn 35, Issue 9, 1999, Pages 745-746

  Zhou, L ^a   Ping, A T ^a   Boutros, K ^b   Redwing, J ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Epitronics/ATMI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RHENIUM; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES;

BARRIER HEIGHTS; SCHOTTKY CONTACTS;

OHMIC CONTACTS;

EID: 0032637268     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990489     Document Type: Article

References (10)

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