Adsorption of phenylphosphonic acid on GaAs (100) surfaces

Langmuir

Volumn 21, Issue 19, 2005, Pages 8765-8773

  Botelho Do Rego, A M ^a   Ferraria, A M ^a   El Beghdadi, J ^b   Debontridder, F ^b   Brogueira, P ^c   Naaman, R ^a   Rei Vilar, M ^b  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b UNIVERSITÉ PARIS DESCARTES   (France)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ACID BASE REACTION; DEPROTONATION; HYDROGEN PHOSPHATE; WATER MIXTURES;

ADSORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MONOLAYERS; OXYGEN; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ORGANIC ACIDS;

GALLIUM; GALLIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; ORGANOPHOSPHORUS COMPOUND; PHENYLPHOSPHONIC ACID;

ADSORPTION; ARTICLE; CHEMISTRY; KINETICS; PARTICLE SIZE; SURFACE PROPERTY; TIME;

ADSORPTION; ARSENICALS; GALLIUM; KINETICS; ORGANOPHOSPHORUS COMPOUNDS; PARTICLE SIZE; SURFACE PROPERTIES; TIME FACTORS;

EID: 25844494471     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la050682+     Document Type: Article

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