Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density

Thin Solid Films

Volumn 342, Issue 1, 1999, Pages 20-29

  Remashan, K ^a   Bhat, K N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ENERGY GAP; SCHOTTKY BARRIER DIODES; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

OCTA DECYL THIOL (ODT) TREATMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032635882     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01414-X     Document Type: Article

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