Characteristics of metal/ferroelectric/insulator/semiconductor using La2O3 thin film as an insulator

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 11 B, 2001, Pages

  Won, Dong Jin ^a   Wang, Chae Hyun ^a   Choi, Doo Jin ^a  

^a Yonsei University   (South Korea)

Author keywords

C V; La2O3; Leakage current density; Memory window; MFIS; MOCVD; PbTiO3; Thin film

Indexed keywords

CURRENT DENSITY; ELECTRIC INSULATING MATERIALS; FERROELECTRIC THIN FILMS; HYSTERESIS; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY MEASUREMENT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE CHARACTERISTICS; LANTHANUM TRIOXIDE; LEAD TITANATE; LEAKAGE CURRENT DENSITY; MEMORY WINDOW; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035891960     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1235     Document Type: Letter

References (12)