Exploitation of volume inversion in optimal DG MOSFET design

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 29-30

  Ge, L ^a   Fossum, J G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CARRIER MOBILITY; DOPING (ADDITIVES); GATES (TRANSISTOR); MONTE CARLO METHODS; PHONONS; POISSON EQUATION; QUANTUM THEORY; SILICON; SURFACE ROUGHNESS;

SCHRODINGER EQUATIONS; VOLUME INVERSION;

MOSFET DEVICES;

EID: 0035159828     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)