A comparative study of threshold variations in symmetric and asymmetric undoped double-gate MOSFETs

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 30-31

  Chen, Qiang ^a   Meindl, James D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

QUANTITATIVE SCALING THEORY; THRESHOLD VARIATIONS;

MOSFET DEVICES;

EID: 0036458455     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Q. Chen, E.M. Harrell, and J.D. Meindl, "A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs," sub. IEEE T-ED, 2002.
2. Q. Chen, B. Agrawal, and J.D. Meindl, "A comprehensive analytical subthreshold swing (S) model for double-gate MOSFET's," IEEE T-ED, vol. 49, no. 6, pp. 1086-1090, June 2002.