CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 187-189

  Mathew, L ^a   Du, Yang ^a   Thean, A V Y ^a   Sadd, M ^a   Vandooren, A ^a   Parker, C ^a   Stephens, T ^a   Mora, R ^a   Rai, R ^a   Zavala, M ^a   Sing, D ^a   Kalpat, S ^a   Hughes, J ^a   Shimer, R ^a   Jallepalli, S ^a   Workman, G ^a   Zhang, W ^b   Fossum, J G ^b   White, B E ^a   Nguyen, B Y ^a   Mogab, J ^a   more..

^a UNIVERSITY OF FLORIDA   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; MATHEMATICAL MODELS; MODULATION; POISSON DISTRIBUTION; POLYSILICON; SIGNAL PROCESSING; THRESHOLD VOLTAGE;

CHARGE COUPLING; DEVICE FABRICATION; MULTIPLE INDEPENDENT GATE FIELD EFFECT TRANSISTORS (MIGFET); SIGNAL MODULATION;

FIELD EFFECT TRANSISTORS;

EID: 20144387099     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. Y. X. Liu, et al, IEDM 2003
4. J.G Fossum et. al SSE Vol. 48, pp. 919-926, June 2004
5. H.-K.Lim et. al IEEE Trans. Elect. Dev., vol. ED-30, p1244-1251, 8-83