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Volumn 43, Issue 12, 2004, Pages 7960-7965
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Effects of chamber wall heating and quartz window on fast deposition of microcrystalline silicon films by high-density microwave plasma
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Author keywords
Chamber wall heating; Fast deposition; High density microwave plasma; Microcrystalline silicon; Oxygen impurity
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Indexed keywords
MICROWAVES;
PLASMA DENSITY;
PLASMA DEVICES;
SURFACE WAVES;
THERMAL EFFECTS;
X RAY DIFFRACTION ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
CHAMBER WALL HEATING;
FAST DEPOSITION;
HIGH-DENSITY MICROWAVE PLASMA;
MICROCRYSTALLINE SILICON;
OXYGEN IMPURITY;
SILICON;
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EID: 13644280605
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.7960 Document Type: Article |
Times cited : (4)
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References (18)
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