Fast deposition of microcrystalline silicon using high-density SiH4 microwave plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6629-6635

  Shirai, Hajime ^a   Sakuma, Yoshikazu ^a   Moriya, Yoshimizu ^a   Fukai, Chisato ^a   Ueyama, Hiroyuki ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b Nihon Koshuha Co Ltd   (Japan)

Author keywords

Fast deposition; High density plasma; Microwave plasma; Optical emission spectroscopy (OES); SiH4; Spokewise antenna; C Si:H

Indexed keywords

CRYSTALLINE MATERIALS; DEPOSITION; EMISSION SPECTROSCOPY; FILM GROWTH; HYDROGENATION; PHOTOSENSITIVITY; PLASMA APPLICATIONS; PLASMA DENSITY; PLASMA FLOW; PLASMA PROBES; PRESSURE EFFECTS;

CRYSTALLINITY; LANGMUIR PROBE; MICROWAVE PLASMA; OPTICAL EMISSION SPECTROSCOPY; SILICON HYDRIDE;

SILICON;

EID: 0033356378     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6629     Document Type: Article

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