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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 2, 2005, Pages 837-841

Characterization of microcrystalline silicon film growth on ZnO:Al using the high-density microwave plasma

(2) Jia, Haijun a Shirai, Hajime a

a SAITAMA UNIVERSITY (Japan)

Author keywords

C Si growth; Ellipsometry; FTIR RAS; High density microwave plasma; In situ monitoring

Indexed keywords

ALUMINUM; DEPOSITION; ELLIPSOMETRY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROWAVES; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELAXATION PROCESSES; SPECTROSCOPIC ANALYSIS; ZINC OXIDE;

ΜC-SI GROWTH; FTIR-RAS; HIGH-DENSITY MICROWAVE PLASMAS; IN SITU MONITORING;

SILICON;

EID: 17544383856 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.837 Document Type: Article

Times cited : (6)

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