High-density microwave plasma for high-rate and low-temperature deposition of silicon thin film

Vacuum

Volumn 59, Issue 1, 2000, Pages 266-276

  Sakuma, Y ^a   Haiping, L ^a   Ueyama, H ^b   Shirai, H ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b Nihon Koshuha Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONDUCTIVE FILMS; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; SUBSTRATES; THIN FILMS;

HIGH-DENSITY MICROWAVE PLASMA;

SILICON;

EID: 0034301818     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00279-7     Document Type: Article

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