Novel high-density microwave plasma utilizing an internal spoke antenna for fast deposition of microcrystalline silicon films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 7 A, 2001, Pages

  Shirai, Hajime ^a   Yoshino, Koichi ^a   Ohkawara, Go ^a   Ueyama, Hiroyuki ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b Nihon Koshuha Co Ltd   (Japan)

Author keywords

High density plasma; Internal spoke antenna; Low temperature plasma; Microcrystalline silicon; Microwave plasma

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC POWER MEASUREMENT; ELECTRON SPIN RESONANCE SPECTROSCOPY; ION BEAMS; MICROWAVE ANTENNAS; PLASMA SOURCES; RAMAN SPECTROSCOPY; RATE CONSTANTS; SEMICONDUCTING SILICON; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

HIGH DENSITY PLASMAS; MICROCRYSTALLINE SILICON FILMS;

PLASMAS;

EID: 0035389654     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l701     Document Type: Article

References (11)