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Volumn 41, Issue 10 B, 2002, Pages
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AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si (111)
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Author keywords
Distributed Bragg reflectors; High reflectivity; MBE; Nitrides; Silicon substrate
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Indexed keywords
COMPOSITION;
EPITAXIAL GROWTH;
LIGHT REFLECTION;
MOLECULAR BEAM EPITAXY;
NITRIDES;
PHOTOLUMINESCENCE;
REFRACTIVE INDEX;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING SILICON;
TRANSMISSION ELECTRON MICROSCOPY;
ULTRAVIOLET RADIATION;
DISTRIBUTED BRAGG REFLECTORS;
HIGH REFLECTIVITY;
SILICON SUBSTRATE;
STRUCTURAL QUALITY;
OPTOELECTRONIC DEVICES;
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EID: 0037110172
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.l1140 Document Type: Article |
Times cited : (12)
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References (14)
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