SCOPUS 정보 검색 플랫폼

Volumn 414, Issue 6865, 2001, Pages 731-735

High-temperature ultrafast polariton parametric amplification in semiconductor microcavities

(11) Saba, M a Cluti, C a Bloch, J b Thierry Mieg, V b Andre R c Dang, Le Si c Kundermann, S a Mura, A d Bongiovanni, G d Staehll, J L a Deveaud, B a

a EPFL (Switzerland)

b CNRS (France)

c UNIV GRENOBLE ALPES (France)

d UNIVERSITY OF CAGLIARI (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; BINDING ENERGY; EXCITONS; OPTICAL MICROSCOPY; OPTICAL SWITCHES; PHOTONS; QUANTUM THEORY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM COMPOUNDS;

HIGH-TEMPERATURE ULTRAFAST POLARITONS; SEMICONDUCTOR MICROCAVITIES;

SEMICONDUCTOR MATERIALS;

ARSENIC; CADMIUM; GALLIUM; TELLURIUM;

HIGH TEMPERATURE;

ARTICLE; ELECTRIC FIELD; ELEMENTARY PARTICLE; GEOMETRY; HIGH TEMPERATURE PROCEDURES; MATHEMATICAL PARAMETERS; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0344179287 PISSN: 00280836 EISSN: None Source Type: Journal
DOI: 10.1038/414731a Document Type: Article

Times cited : (395)

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