MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 961-967

  Nakada, Naoyuki ^a   Ishikawa, Hiroyasu ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A3. Low pressure metal organic chemical vapor deposition; A3. Metal organic chemical vapor deposition; B3. Vertical cavity surface emitting lasers

Indexed keywords

ATMOSPHERIC PRESSURE; GALLIUM NITRIDE; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; MULTILAYERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS;

CRYSTAL GROWTH;

EID: 0036530599     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02022-X     Document Type: Article

References (12)