Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

Applied Physics Letters

Volumn 76, Issue 5, 2000, Pages 529-531

  Hansen, M ^a   Fini, P ^a   Zhao, L ^a   Abare, A C ^a   Coldren, L A ^a   Speck, J S ^a   DenBaars, S P ^a  

^a University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001333893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125808     Document Type: Article

References (22)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemeto, M. Sano, and K. Chocho, Proceedings of the International Conference on Nitride Semiconductors, 1997 (unpublished), S-1, p. 444.
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemeto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998).
3. K. Ito, K. Hiramatsu, H. Amano, and I. Akasaki, J. Cryst. Growth 104, 533 (1990).
4. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 71, 1204 (1997).
5. T. S. Zheleva, O.-H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997).
6. O.-H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997).
7. H. Marchand, J. P. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, MRS Internet J. Nitride Semicond. Res. 3, 3 (1998).
8. A. Usui, H. Sunakawa, A. Sakai, and A. A. Yamaguchi, Jpn. J. Appl. Phys., Part 2 36, L899 (1997).
9. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 71, 2259 (1997).
10. P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 73, 957 (1998).
11. C. Sasaoka, H. Sunakawa, A. Kimura, M. Nido, A. Usui, and A. Sakai, J. Cryst. Growth 189/190, 61 (1998).
12. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, and T. Mukai, MRS Internet J. Nitride Semicond. Res. 4S1, G1.1 (1999).
13. R. Vetury, H. Marchand, J. P. Ibbetson, P. Fini, S. Keller, J. S. Speck, S. P. DenBaars, and U.K. Mishra, Proceedings of the 25th International Symposium Compound Semiconductor, Nara, Japan, 1998 (unpublished).
14. G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, Appl. Phys. Lett. 75, 247 (1999).
15. H. Marchand, J. P. Ibbetson, P. Fini, S. Chichibu, S. J. Rosner, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Proceedings of the 25th International Symposium Compounds Semiconductors, Nara Japan, 1998 (unpublished).
16. K. Tsukamoto, W. Taki, N. Kuwano, K. Oki, T. Shibata, N. Sawaki, and K. Hiramatsu, Proceedings of the 2nd International Symposium On Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan, 1998, p. 488-491.
17. P. Fini, J. P. Ibbetson, H. Marchand, L. Zhao, S. P. DenBaars, and J. S. Speck, J. Cryst. Growth (unpublished).
18. P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J. P. Ibbetson, S. P. DenBaars, U. K. Mishra, and J. S. Speck. Appl. Phys. Lett. 75, 1706 (1999).
19. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995).
20. M. P. Mack, G. D. Via, A. C. Abare, M. Hansen, P. Kozodoy, S. Keller, J. S. Speck, U. K. Mishra, L. A. Coldren, and S. P. DenBaars, Electron. Lett. 34, 1315 (1998).
21. For a review on physical properties of threading dislocations in GaN please see J. S. Speck and S. J. Rosner, Physica B (to be published).
22. M. Hansen, P. Fini, A. C. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars (unpublished).