InGaN vertical microcavity LEDs with a Si-doped AlGaN/GaN distributed Bragg reflector

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 403-406

  Arita, M ^a   Nishioka, M ^b   Arakawa, Y ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; GALLIUM NITRIDE; LIGHT EMISSION; MIRRORS; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; DISTRIBUTED BRAGG REFLECTOR; INDIUM GALLIUM NITRIDE; MICROCAVITY EFFECTS;

LIGHT EMITTING DIODES;

EID: 0036965080     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<403::AID-PSSA403>3.0.CO;2-2     Document Type: Article

References (4)

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4. T. Someya and Y. Arakawa, Appl. Phys. Lett. 73, 3653 (1998).