-
1
-
-
0032165601
-
High-speed detectors: Faster measurements for today's laboratory
-
Sept
-
A. Davidson and K. L. Dessau, "High-speed detectors: Faster measurements for today's laboratory," Photonics Spectra, pp. 110-114, Sept. 1998.
-
(1998)
Photonics Spectra
, pp. 110-114
-
-
Davidson, A.1
Dessau, K.L.2
-
2
-
-
0032666653
-
Ultrawide-band/high-frequency photodetectors
-
July
-
K. Kato, "Ultrawide-band/high-frequency photodetectors," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1265-1281, July 1999.
-
(1999)
IEEE Trans. Microwave Theory Tech.
, vol.47
, pp. 1265-1281
-
-
Kato, K.1
-
3
-
-
0032028734
-
Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product
-
Mar
-
H. Nie, K. A. Anselm, C. Lenox, P. Yuan, C. Hu, G. Kinsey, B. G. Streetman, and J. C. Campbell, "Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product," IEEE Photon. Technol. Lett., vol. 10, pp. 409-411, Mar. 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 409-411
-
-
Nie, H.1
Anselm, K.A.2
Lenox, C.3
Yuan, P.4
Hu, C.5
Kinsey, G.6
Streetman, B.G.7
Campbell, J.C.8
-
4
-
-
0035423510
-
Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz
-
Aug
-
G. S. Kinsey, J. C. Campbell, and A. G. Dentai, "Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz," IEEE Photon. Technol. Lett., vol. 13, pp. 842-844, Aug. 2001.
-
(2001)
IEEE Photon. Technol. Lett.
, vol.13
, pp. 842-844
-
-
Kinsey, G.S.1
Campbell, J.C.2
Dentai, A.G.3
-
5
-
-
0036649712
-
Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes
-
July
-
J. Wei, J. C. Dries, H. Wang, M. L. Lange, G. H. Olsen, and S. R. Forrest, "Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 14, pp. 977-979, July 2002.
-
(2002)
IEEE Photon. Technol. Lett.
, vol.14
, pp. 977-979
-
-
Wei, J.1
Dries, J.C.2
Wang, H.3
Lange, M.L.4
Olsen, G.H.5
Forrest, S.R.6
-
6
-
-
0036852842
-
A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode
-
Nov
-
J. Wei, F. Xia, and S. R. Forrest, "A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode," IEEE Photon. Technol. Lett., vol. 14, pp. 1590-1592, Nov. 2002.
-
(2002)
IEEE Photon. Technol. Lett.
, vol.14
, pp. 1590-1592
-
-
Wei, J.1
Xia, F.2
Forrest, S.R.3
-
7
-
-
0031208103
-
Design of silicon hetero-interface photodetectors
-
Aug
-
W. Wu, A. R. Hawkins, and J. E. Bowers, "Design of silicon hetero-interface photodetectors," J. Lightwave Technol., vol. 15, pp. 1608-1615, Aug. 1997.
-
(1997)
J. Lightwave Technol.
, vol.15
, pp. 1608-1615
-
-
Wu, W.1
Hawkins, A.R.2
Bowers, J.E.3
-
8
-
-
0036851096
-
Fused InGaAs-Si avalanche photodiodes with low-noise performances
-
Nov
-
Y. Kang, P. Mages, A. R. Clawson, P. K. L. Yu, M. Bitter, Z. Pan, A. Pauchard, S. Hummel, and Y. H. Lo, "Fused InGaAs-Si avalanche photodiodes with low-noise performances," IEEE Photon. Technol. Lett., vol. 14, pp. 1593-1595, Nov. 2002.
-
(2002)
IEEE Photon. Technol. Lett.
, vol.14
, pp. 1593-1595
-
-
Kang, Y.1
Mages, P.2
Clawson, A.R.3
Yu, P.K.L.4
Bitter, M.5
Pan, Z.6
Pauchard, A.7
Hummel, S.8
Lo, Y.H.9
-
9
-
-
0035678160
-
Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region
-
Dec
-
S. Wang, R. Sidhu, X. G. Zheng, X. Li, X. Sun, A. L. Holmes Jr., and J. C. Campbell, "Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region," IEEE Photon. Technol. Lett., vol. 13, pp. 1346-1348, Dec. 2001.
-
(2001)
IEEE Photon. Technol. Lett.
, vol.13
, pp. 1346-1348
-
-
Wang, S.1
Sidhu, R.2
Zheng, X.G.3
Li, X.4
Sun, X.5
Holmes Jr., A.L.6
Campbell, J.C.7
-
10
-
-
0037318469
-
Ultra-low noise avalanche photodiodes with a 'centered-well' multiplication region
-
Feb
-
S. Wang, F. Ma, X. Li, R. Sidhu, X. G. Zheng, X. Sun, A. L. Holmes Jr., and J. C. Campbell, "Ultra-low noise avalanche photodiodes with a 'centered-well' multiplication region," IEEE J. Quantum Electron., vol. 39, pp. 375-378, Feb. 2003.
-
(2003)
IEEE J. Quantum Electron.
, vol.39
, pp. 375-378
-
-
Wang, S.1
Ma, F.2
Li, X.3
Sidhu, R.4
Zheng, X.G.5
Sun, X.6
Holmes Jr., A.L.7
Campbell, J.C.8
-
11
-
-
0031207934
-
Diluted- and distributed-absorption microwave waveguide photodiodes for high efficiency and high power
-
Aug
-
S. Jasmin, N. Vodjdani, J. Renaud, and A. Enard, "Diluted- and distributed-absorption microwave waveguide photodiodes for high efficiency and high power," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1337-1341, Aug. 1997.
-
(1997)
IEEE Trans. Microwave Theory Tech.
, vol.45
, pp. 1337-1341
-
-
Jasmin, S.1
Vodjdani, N.2
Renaud, J.3
Enard, A.4
-
12
-
-
0036924582
-
Linearity improvement in photodetectors by using index-matching layer extensions
-
Nov
-
S. Murthy, T. Jung, M. C. Wu, Z. Wang, and W. Hsin, "Linearity improvement in photodetectors by using index-matching layer extensions," in Proc. IEEE Lasers & Electro-Optics Soc. 2002 Annu. Meeting, Nov. 2002, pp. 424-425.
-
(2002)
Proc. IEEE Lasers & Electro-Optics Soc. 2002 Annu. Meeting
, pp. 424-425
-
-
Murthy, S.1
Jung, T.2
Wu, M.C.3
Wang, Z.4
Hsin, W.5
-
13
-
-
0029375676
-
Traveling-wave photodetectors for high-power, large bandwidth applications
-
Sept
-
V. M. Hietala, G. A. Vawter, T. M. Brenan, and B. E. Hammons, "Traveling-wave photodetectors for high-power, large bandwidth applications," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2291-2297, Sept. 1995.
-
(1995)
IEEE Trans. Microwave Theory Tech.
, vol.43
, pp. 2291-2297
-
-
Hietala, V.M.1
Vawter, G.A.2
Brenan, T.M.3
Hammons, B.E.4
-
14
-
-
0036851079
-
Ultra-high power-bandwidth product and nonlinear photo-conductance performances of low-temperature-grown GaAs based metal-semiconductor-metal traveling-wave photodetectors
-
Nov
-
J.-W. Shi, K. G. Gan, Y.-H. Chen, C.-K. Sun, Y. J. Chiu, and J. E. Bowers, "Ultra-high power-bandwidth product and nonlinear photo-conductance performances of low-temperature-grown GaAs based metal-semiconductor-metal traveling-wave photodetectors," IEEE Photon. Technol. Lett., vol. 14, pp. 1587-1589, Nov. 2002.
-
(2002)
IEEE Photon. Technol. Lett.
, vol.14
, pp. 1587-1589
-
-
Shi, J.-W.1
Gan, K.G.2
Chen, Y.-H.3
Sun, C.-K.4
Chiu, Y.J.5
Bowers, J.E.6
-
15
-
-
0034453865
-
Design and analysis of long absorption length traveling wave photodetector
-
Dec
-
J.-W. Shi and C.-K. Sun, "Design and analysis of long absorption length traveling wave photodetector," J. Lightwave Technol., vol. 18, pp. 2176-2187, Dec. 2000.
-
(2000)
J. Lightwave Technol.
, vol.18
, pp. 2176-2187
-
-
Shi, J.-W.1
Sun, C.-K.2
-
16
-
-
0032122749
-
High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector
-
July
-
Y. J. Chiu, S. B. Fleischer, and J. E. Bowers, "High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector," IEEE Photon. Technol. Lett., vol. 10, pp. 1012-1014, July 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 1012-1014
-
-
Chiu, Y.J.1
Fleischer, S.B.2
Bowers, J.E.3
-
17
-
-
0037373545
-
x multi-quantum well phototransistor for near-infrared operation
-
Mar
-
x multi-quantum well phototransistor for near-infrared operation," Physica E: Low-Dimensional Systems Nanostructure, vol. 16, pp. 554-557, Mar. 2003.
-
(2003)
Physica E: Low-Dimensional Systems Nanostructure
, vol.16
, pp. 554-557
-
-
Pei, Z.1
Lai, L.S.2
Hwang, H.P.3
Tseng, Y.T.4
Liang, C.S.5
Tsai, M.-J.6
-
18
-
-
36549101784
-
0.4 rib waveguide avalanche photodetectors for 1.3 μm operation
-
Sept
-
0.4 rib waveguide avalanche photodetectors for 1.3 μm operation," Appl. Phys. Lett., vol. 49, pp. 809-811, Sept. 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, pp. 809-811
-
-
Temkin, H.1
Antreasyan, A.2
Olsson, N.A.3
Pearsall, T.P.4
Bean, J.C.5
-
19
-
-
3142784569
-
-
Ph.D. dissertation, Dept. of Electrical and Computer Engineering, Univ. of California, Santa Barbara, CA
-
A. R. Hawkins, "Silicon-indium-gallium-arsenide avalanche photodetectors," Ph.D. dissertation, Dept. of Electrical and Computer Engineering, Univ. of California, Santa Barbara, CA, 1998.
-
(1998)
Silicon-Indium-Gallium-Arsenide Avalanche Photodetectors
-
-
Hawkins, A.R.1
-
20
-
-
0346688018
-
Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-μm operation
-
Oct
-
C. Li, Q. Yang, H. Wang, J. Yu, Q. Wang, Y. Li, J. Zhou, H. Huang, and X. Ren, "Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-μm operation," IEEE Photon. Technol. Lett., vol. 12, pp. 1373-1375, Oct. 2000.
-
(2000)
IEEE Photon. Technol. Lett.
, vol.12
, pp. 1373-1375
-
-
Li, C.1
Yang, Q.2
Wang, H.3
Yu, J.4
Wang, Q.5
Li, Y.6
Zhou, J.7
Huang, H.8
Ren, X.9
-
21
-
-
36549097538
-
1-x strained-layer superlattice waveguide photodetectors operating near 1.3 μm
-
Apr
-
1-x strained-layer superlattice waveguide photodetectors operating near 1.3 μm," Appl. Phys. Lett., vol. 48, pp. 963-965, Apr. 1986.
-
(1986)
Appl. Phys. Lett.
, vol.48
, pp. 963-965
-
-
Temkin, H.1
Pearsall, T.P.2
Bean, J.C.3
Logan, R.A.4
Luryi, S.L.5
-
22
-
-
0028013974
-
Integration of waveguides and photodetectors in SiGe for 1.3 μm operation
-
Jan
-
A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H.-J. Herzog, and H. Presting, "Integration of waveguides and photodetectors in SiGe for 1.3 μm operation," IEEE Photon. Technol. Lett., vol. 6, pp. 59-61, Jan. 1994.
-
(1994)
IEEE Photon. Technol. Lett.
, vol.6
, pp. 59-61
-
-
Splett, A.1
Zinke, T.2
Petermann, K.3
Kasper, E.4
Kibbel, H.5
Herzog, H.-J.6
Presting, H.7
-
23
-
-
0031076526
-
Epitaxial SiGeC waveguide photodetector on Si substrate with response in the 1.3-1.55 μm
-
Feb
-
F. Y. Huang, K. Sakamoto, K. L. Wang, P. Trinh, and B. Jalali, "Epitaxial SiGeC waveguide photodetector on Si substrate with response in the 1.3-1.55 μm," IEEE Photon. Technol. Lett., vol. 9, pp. 229-231, Feb. 1997.
-
(1997)
IEEE Photon. Technol. Lett.
, vol.9
, pp. 229-231
-
-
Huang, F.Y.1
Sakamoto, K.2
Wang, K.L.3
Trinh, P.4
Jalali, B.5
-
24
-
-
0000808964
-
Monolithic integration of a SiGe/Si modulator and multiple quantum well photodetector for 1.55 μm operation
-
Dec
-
B. Li, G. Li, E. Liu, Z. Jiang, J. Qin, and X. Wang, "Monolithic integration of a SiGe/Si modulator and multiple quantum well photodetector for 1.55 μm operation," Appl. Phys. Lett., vol. 73, pp. 3504-3505, Dec. 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3504-3505
-
-
Li, B.1
Li, G.2
Liu, E.3
Jiang, Z.4
Qin, J.5
Wang, X.6
-
25
-
-
79955991285
-
Fast time response from Si-SiGe undulating layer supperlatices
-
June
-
D. Buca, S. Winnerl, S. Lenk, C. Buchal, and D.-X. Xu, "Fast time response from Si-SiGe undulating layer supperlatices," Appl. Phys. Lett., vol. 80, pp. 4172-4174, June 2002.
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 4172-4174
-
-
Buca, D.1
Winnerl, S.2
Lenk, S.3
Buchal, C.4
Xu, D.-X.5
-
26
-
-
0032621310
-
0.5 layers for photodetectors at λ = 1.55 μm
-
Aug
-
0.5 layers for photodetectors at λ = 1.55 μm," J. Appl. Phys., vol. 86, pp. 1287-1291, Aug. 1999.
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 1287-1291
-
-
Lafontaine, H.1
Rowell, N.L.2
Janz, S.3
Xu, D.-X.4
-
27
-
-
0036504359
-
High speed and high power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3 μm wavelength regime
-
Mar
-
J.-W. Shi, Y.-H. Chen, K.-G. G, Y.-J. Chiu, C.-K. Sun, and J. E. Bowers, "High speed and high power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3 μm wavelength regime," IEEE Photon. Technol. Lett., vol. 14, pp. 363-365, Mar. 2002.
-
(2002)
IEEE Photon. Technol. Lett.
, vol.14
, pp. 363-365
-
-
Shi, J.-W.1
Chen, Y.-H.2
G, K.-G.3
Chiu, Y.-J.4
Sun, C.-K.5
Bowers, J.E.6
-
28
-
-
0347022677
-
High-responsivity and high-speed evanescently coupled avalanche photodiodes
-
Dec
-
S. Demiguel, X. Zheng, N. Li, X. Li, J. C. Campbell, J. Decobert, N. Tscherptner, and A. Anselm, "High-responsivity and high-speed evanescently coupled avalanche photodiodes," Electron. Lett., vol. 39, Dec. 2003.
-
(2003)
Electron. Lett.
, vol.39
-
-
Demiguel, S.1
Zheng, X.2
Li, N.3
Li, X.4
Campbell, J.C.5
Decobert, J.6
Tscherptner, N.7
Anselm, A.8
-
29
-
-
0034314963
-
10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure
-
Nov
-
T. Nakata, T. Takeuchi, I. Watanabe, K. Makita, and T. Torikai, "10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure," Electron. Lett., vol. 36, pp. 2033-2034, Nov. 2000.
-
(2000)
Electron. Lett.
, vol.36
, pp. 2033-2034
-
-
Nakata, T.1
Takeuchi, T.2
Watanabe, I.3
Makita, K.4
Torikai, T.5
-
30
-
-
0029236237
-
A strained InAlAs/InGaAs superlattice avalanche photodiode for operation at an IC-power-supply voltage
-
May
-
S. Hanatani, M. Shishikura, S. Tanaka, H. Kitano, T. Miyazaki, and H. Nakamura, "A strained InAlAs/InGaAs superlattice avalanche photodiode for operation at an IC-power-supply voltage," in Proc. Int. Conf. Indium Phosphide Related Materials 1995, May 1995, pp. 369-372.
-
(1995)
Proc. Int. Conf. Indium Phosphide Related Materials 1995
, pp. 369-372
-
-
Hanatani, S.1
Shishikura, M.2
Tanaka, S.3
Kitano, H.4
Miyazaki, T.5
Nakamura, H.6
-
31
-
-
0035651896
-
High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers
-
Nov
-
T. Nakata, T. Takeuchi, K. Makita, and T. Torikai, "High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers," in Proc. IEEE Lasers & Electro-Optics Soc. 2001 Annu. Meeting, Nov. 2001, pp. 770-771.
-
(2001)
Proc. IEEE Lasers & Electro-Optics Soc. 2001 Annu. Meeting
, pp. 770-771
-
-
Nakata, T.1
Takeuchi, T.2
Makita, K.3
Torikai, T.4
-
32
-
-
0031212465
-
Traveling-wave photodetector theory
-
Aug
-
K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Traveling-wave photodetector theory," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1310-1319, Aug. 1997.
-
(1997)
IEEE Trans. Microwave Theory Tech.
, vol.45
, pp. 1310-1319
-
-
Giboney, K.S.1
Rodwell, M.J.W.2
Bowers, J.E.3
-
33
-
-
3142712593
-
-
private communication
-
Z. Pei, private communication.
-
-
-
Pei, Z.1
-
34
-
-
0344614692
-
y layers
-
July
-
y layers," IEEE Electron Device Lett., vol. 20, pp. 338-340, July 1999.
-
(1999)
IEEE Electron Device Lett.
, vol.20
, pp. 338-340
-
-
Quinones, E.1
Ray, S.K.2
Liu, K.C.3
Banerjee, S.4
-
35
-
-
0036851357
-
0.48As avalanche photodiode array
-
Nov
-
0.48As avalanche photodiode array," IEEE J. Quantum Electron., vol. 38, pp. 1536-1540, Nov. 2002.
-
(2002)
IEEE J. Quantum Electron.
, vol.38
, pp. 1536-1540
-
-
Zheng, X.G.1
Hsu, J.S.2
Sun, X.3
Hurst, J.B.4
Li, X.5
Wang, S.6
Holmes, A.L.7
Campbell, J.C.8
Huntington, A.S.9
Coldren, L.A.10
-
36
-
-
0030653421
-
Waveguide AlInAs/AlGaInAs avalanche photodiode for 20 Gbit/s photoreceivers
-
May
-
C. Cohen-Jonathan, L. Giraudet, J. P. Praseuth, E. Legros, F. Heliot, and A. Bonzo, "Waveguide AlInAs/AlGaInAs avalanche photodiode for 20 Gbit/s photoreceivers," in Proc. Int. Conf. Indium Phosphide Related Materials 1997, May 1997, pp. 486-489.
-
(1997)
Proc. Int. Conf. Indium Phosphide Related Materials 1997
, pp. 486-489
-
-
Cohen-Jonathan, C.1
Giraudet, L.2
Praseuth, J.P.3
Legros, E.4
Heliot, F.5
Bonzo, A.6
-
37
-
-
0036564313
-
Gain-bandwidth characteristics of thin avalanche photodiodes
-
May
-
M. M. Hayat, O.-H. Kwon, Y. Pan, P. Sotirelis, J. C. Campbell, B. E. A. Saleh, and M. C. Teich, "Gain-bandwidth characteristics of thin avalanche photodiodes," IEEE Trans. Electron Devices, vol. 49, pp. 770-781, May 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 770-781
-
-
Hayat, M.M.1
Kwon, O-H.2
Pan, Y.3
Sotirelis, P.4
Campbell, J.C.5
Saleh, B.E.A.6
Teich, M.C.7
-
38
-
-
3142664238
-
-
Integrated Systems Engineering AG , Zurich, Switzerland
-
DESSIS-ISE Release 7.5, Integrated Systems Engineering AG , Zurich, Switzerland, 2002.
-
(2002)
DESSIS-ISE Release 7.5
-
-
-
39
-
-
3142661365
-
-
Ph.D. dissertation, Dept. of Electrical and Computer Engineering, Univ. of California , Santa Barbara, CA
-
K. S. Giboney, "Traveling-wave photodetectors," Ph.D. dissertation, Dept. of Electrical and Computer Engineering, Univ. of California , Santa Barbara, CA, 1995.
-
(1995)
Traveling-wave Photodetectors
-
-
Giboney, K.S.1
-
41
-
-
0032025527
-
InP-InGaAs unitraveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz
-
Mar
-
N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "InP-InGaAs unitraveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz," IEEE Photon. Technol. Lett., vol. 10, pp. 412-414, Mar. 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 412-414
-
-
Shimizu, N.1
Watanabe, N.2
Furuta, T.3
Ishibashi, T.4
-
42
-
-
0032284876
-
Bandwidth characteristics of InP/InGaAs uni-traveling-carrier photodiodes
-
Oct
-
N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "Bandwidth characteristics of InP/InGaAs uni-traveling-carrier photodiodes," in Tech. Dig. 1998 Int. Topical Meeting Microwave Photonic, Oct. 1998, pp. 193-194.
-
(1998)
Tech. Dig. 1998 Int. Topical Meeting Microwave Photonic
, pp. 193-194
-
-
Shimizu, N.1
Watanabe, N.2
Furuta, T.3
Ishibashi, T.4
-
44
-
-
0000512292
-
Avalanche-photodiode frequency response
-
Aug
-
R. B. Emmons, "Avalanche-photodiode frequency response," J. Appl. Phys., vol. 38, pp. 3705-3714, Aug. 1967.
-
(1967)
J. Appl. Phys.
, vol.38
, pp. 3705-3714
-
-
Emmons, R.B.1
-
45
-
-
0022152954
-
Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption 'grading' and multiplication regions
-
Nov
-
J. C. Campbell, W. S. Holden, G. J. Qua, and A. G. Dentai, "Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption 'grading' and multiplication regions," IEEE J. Quantum Electron., vol. QE-21, pp. 1743-1746, Nov. 1985.
-
(1985)
IEEE J. Quantum Electron.
, vol.QE-21
, pp. 1743-1746
-
-
Campbell, J.C.1
Holden, W.S.2
Qua, G.J.3
Dentai, A.G.4
-
46
-
-
0030109380
-
AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power application
-
Mar
-
C. Nguyen, T. Liu, M. Chen, H.-C. Sun, and D. Rensch, "AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power application," IEEE Electron Device Lett., vol. 17, pp. 133-135, Mar. 1996.
-
(1996)
IEEE Electron Device Lett.
, vol.17
, pp. 133-135
-
-
Nguyen, C.1
Liu, T.2
Chen, M.3
Sun, H.-C.4
Rensch, D.5
|