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Volumn 10, Issue 3, 1998, Pages 409-411

Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product

Author keywords

Avalanche photodiodes; Bandwidth

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; CAVITY RESONATORS; CURRENT VOLTAGE CHARACTERISTICS; LIGHT ABSORPTION; PHOTOIONIZATION; SEMICONDUCTOR DOPING;

EID: 0032028734     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.661426     Document Type: Article
Times cited : (71)

References (18)
  • 1
    • 0015650991 scopus 로고
    • Receiver design for digital fiber-optic communication systems
    • S. D. Personick, "Receiver design for digital fiber-optic communication systems," Bell Syst. Tech. J., vol. 52, pp. 843-886, 1973.
    • (1973) Bell Syst. Tech. J. , vol.52 , pp. 843-886
    • Personick, S.D.1
  • 3
    • 0001292001 scopus 로고
    • InGaAsP heterostructure avalanche photodiodes with high avalanche gain
    • K. Nishida, K. Tagachi, and Y. Matsumoto, "InGaAsP heterostructure avalanche photodiodes with high avalanche gain," Appl. Phys. Lett., vol. 35, pp. 251-252, 1979.
    • (1979) Appl. Phys. Lett. , vol.35 , pp. 251-252
    • Nishida, K.1    Tagachi, K.2    Matsumoto, Y.3
  • 4
    • 0030781548 scopus 로고    scopus 로고
    • High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product
    • H. Nie, K. A. Anselm, C. Hu, S. S. Murtaza, B. G. Streetman, and J. C. Campbell, "High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product," Appl. Phys. Lett., vol. 70, pp. 161-163, 1997.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 161-163
    • Nie, H.1    Anselm, K.A.2    Hu, C.3    Murtaza, S.S.4    Streetman, B.G.5    Campbell, J.C.6
  • 5
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, pp. 164-168, 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 164-168
    • McIntyre, R.J.1
  • 6
    • 0000530724 scopus 로고
    • Multilayer reflectors by molecular beam epitaxy for resonance enhanced absorption in thin high-speed detectors
    • A. Chin, and T. Y. Chang, "Multilayer reflectors by molecular beam epitaxy for resonance enhanced absorption in thin high-speed detectors," J. Vac. Sci. Technol., vol. 8, pp. 339-342, 1990.
    • (1990) J. Vac. Sci. Technol. , vol.8 , pp. 339-342
    • Chin, A.1    Chang, T.Y.2
  • 7
    • 0023983667 scopus 로고
    • High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
    • J. C. Campbell, W. T. Tsang, G. J. Qua, and B. C. Johnson, "High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum Electron., vol. 24, pp. 496-500, 1988.
    • (1988) IEEE J. Quantum Electron. , vol.24 , pp. 496-500
    • Campbell, J.C.1    Tsang, W.T.2    Qua, G.J.3    Johnson, B.C.4
  • 8
    • 0027611046 scopus 로고
    • High-frequency performance of separate absorption and multiplication InP/InGaAs avalanche photodiodes
    • L. E. Tarof, J. Yu, R. Bruce, D. G. Knight, T. Baird, and B. Oosterbrink, "High-frequency performance of separate absorption and multiplication InP/InGaAs avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 5, pp. 672-674, 1993.
    • (1993) IEEE Photon. Technol. Lett. , vol.5 , pp. 672-674
    • Tarof, L.E.1    Yu, J.2    Bruce, R.3    Knight, D.G.4    Baird, T.5    Oosterbrink, B.6
  • 9
    • 12944277819 scopus 로고
    • Planar InGaAs/InP APD fabricating using VPE and Si implantation techniques
    • Washington, DC
    • P. P. Webb, R. J. McIntyre, J. Scheibling, and M. Holunga, "Planar InGaAs/InP APD fabricating using VPE and Si implantation techniques," presented at the Opt. Fiber Commun. Conf., Washington, DC, 1988.
    • (1988) Opt. Fiber Commun. Conf.
    • Webb, P.P.1    McIntyre, R.J.2    Scheibling, J.3    Holunga, M.4
  • 10
    • 0000140623 scopus 로고
    • Planar InP/InGaAs avalanche photodetectors with partial charge in the device periphery
    • L. E. Tarof, D. G. Knight, K. E. Fox, C. J. Miner, N. Puetz, and H. B. Kim, "Planar InP/InGaAs avalanche photodetectors with partial charge in the device periphery," Appl. Phys. Lett., vol. 57, pp. 670-672, 1990.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 670-672
    • Tarof, L.E.1    Knight, D.G.2    Fox, K.E.3    Miner, C.J.4    Puetz, N.5    Kim, H.B.6
  • 11
    • 0026189449 scopus 로고
    • Delta-doped avalanche photodiodes for high bit-rate lightwave receivers
    • R. Kuchibholta and J. C. Campbell, "Delta-doped avalanche photodiodes for high bit-rate lightwave receivers," J. Lightwave Technol., vol. 5, pp. 900-905, 1991.
    • (1991) J. Lightwave Technol. , vol.5 , pp. 900-905
    • Kuchibholta, R.1    Campbell, J.C.2
  • 12
    • 0001685402 scopus 로고    scopus 로고
    • Noise characteristics of thin multiplication region GaAs avalanche photodiodes
    • C. Hu, K. A. Anselm, B. G. Streetman, J. C. Campbell, "Noise characteristics of thin multiplication region GaAs avalanche photodiodes," Appl. Phys. Lett., vol. 69, pp. 3734-3736, 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 3734-3736
    • Hu, C.1    Anselm, K.A.2    Streetman, B.G.3    Campbell, J.C.4
  • 13
    • 0026866665 scopus 로고
    • Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect
    • J. Marsland, R. Woods, and C. Brownholl, "Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect," IEEE Trans. Electron Devices, vol. 39, pp. 1129-1135, 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1129-1135
    • Marsland, J.1    Woods, R.2    Brownholl, C.3
  • 14
    • 0029754695 scopus 로고    scopus 로고
    • Mean gain of avalanche photodiodes in a dead space model
    • A. Spinelli and A. Lacatia, "Mean gain of avalanche photodiodes in a dead space model," IEEE Trans. Electron Devices, vol. 40, pp. 22-30, 1996.
    • (1996) IEEE Trans. Electron Devices , vol.40 , pp. 22-30
    • Spinelli, A.1    Lacatia, A.2
  • 17
    • 0030815488 scopus 로고    scopus 로고
    • High gain-bandwidth-product silicon heterointerface photodetector
    • A. R. Hawkins, W. Wu, P. Abraham, K. Streubel, and J. E. Bowers, "High gain-bandwidth-product silicon heterointerface photodetector," Appl. Phys. Lett., vol. 70, pp. 303-305, 1997.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 303-305
    • Hawkins, A.R.1    Wu, W.2    Abraham, P.3    Streubel, K.4    Bowers, J.E.5
  • 18
    • 0010282344 scopus 로고
    • 150 GHz GB-product and low dark current InAlGaAs quaternary well superlattice avalanche photodiodes
    • paper TuB2-1
    • K. Makita, I. Watanabe, M. Tsuji, and K. Tagughi, "150 GHz GB-product and low dark current InAlGaAs quaternary well superlattice avalanche photodiodes," in Proc. IOOC-95, 1995, p. 36, paper TuB2-1.
    • (1995) Proc. IOOC-95 , pp. 36
    • Makita, K.1    Watanabe, I.2    Tsuji, M.3    Tagughi, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.