10Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure

Electronics Letters

Volumn 36, Issue 24, 2000, Pages 2033-2034

  Nakata, T ^a   Takeuchi, T ^a   Watanabe, I ^a   Makita, K ^a   Torikai, T ^a  

^a Syst Devices and Fundamental Res   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BIT ERROR RATE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS; WAVEGUIDES;

BEAM PROPAGATION METHOD; INDIUM ALUMINUM ARSENIDE; WAVEGUIDE AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0034314963     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001421     Document Type: Article

References (10)

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