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Volumn 16, Issue 3-4, 2003, Pages 554-557

Si1-xGex/Si multi-quantum well phototransistor for near-infrared operation

Author keywords

Multi quantum well; Phototransistor

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED RADIATION; LIGHT ABSORPTION; PHOTOTRANSISTORS; QUANTUM EFFICIENCY;

EID: 0037373545     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00645-8     Document Type: Conference Paper
Times cited : (7)

References (5)
  • 3
    • 0034314036 scopus 로고    scopus 로고
    • Monolithically integraded multichannel SiGe-Si p-i-n-HBT photoreceivers
    • Qasaimeh O., Ma Z., Bhattachays P., Croke E.T. Monolithically integraded multichannel SiGe-Si p-i-n-HBT photoreceivers. J. Lightwave Technol. 18:2000;1548.
    • (2000) J. Lightwave Technol. , vol.18 , pp. 1548
    • Qasaimeh, O.1    Ma, Z.2    Bhattachays, P.3    Croke, E.T.4
  • 4
    • 77957783610 scopus 로고
    • W.T. Tsang (Ed.), Academic, New York, (Chapter 5)
    • J.C. Campbell, in: W.T. Tsang (Ed.), Semiconductors and Semimetals, Vol. 22, Academic, New York, 1985, p. 389 (Chapter 5).
    • (1985) Semiconductors and Semimetals , vol.22 , pp. 389
    • Campbell, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.