Design of silicon hetero-interface photodetectors

Journal of Lightwave Technology

Volumn 15, Issue 8, 1997, Pages 1608-1615

  Wu, Weishu ^a   Hawkins, Aaron R ^a   Bowers, John E ^a  

^a University of California   (United States)

Author keywords

Avalanche photodiodes; High speed devices; Optoelectronic devices; Photodetectors; Semiconductor devices

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; COMPUTATIONAL METHODS; FREQUENCY RESPONSE; GAIN MEASUREMENT; HETEROJUNCTIONS; LIGHT ABSORPTION; OPTICAL DESIGN; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODETECTORS;

PHOTODETECTORS;

EID: 0031208103     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.618397     Document Type: Article

References (27)

1. J. C. Campbell, "Heterojunction photodetectors for optical communications," Heterostructures and Quantum Devices. New York: Academic, 1994, pp. 243-271.
2. L. Kasper and J. C. Campbell, "Multigigabit-per-second avalanche photodiode lightwave receivers," J. Lightwave Technol., vol. LT-5, pp. 1351-1364, 1987.
3. S. Fujita, N. Henmi, I. Takano, M. Yamaguchi, T. Torikai, T. Suzaki, S. Takano, H. Ishihara, and M. Shikada, "A 10 Gbit/s 80 km optical fiber transmission experiment using a directly modulated DFB-LD and a high speed InGaAs APD," in Tech. Dig. OFC'88, New Orleans, LA, 1988, postdeadline paper.
4. R. B. Emmons, "Avalanche-photodiode frequency response," J. Appl. Phys., vol. 38, pp. 3705-3714, 1967.
5. J. E. Bowers and C. A. Burrus, Jr., "Ultrawide-band long-wavelength p-i-n photodetectors," J. Lightwave TechnoL, vol. LT-5, pp. 1339-1350, 1987.
6. 0.47As/InP avalanche photodetectors," Appl. Phys. Lett., vol. 41, pp. 95-98, 1982.
7. J. C. Campbell, W. T. Tsang, G. J. Qua, and J. E. Bowers, "InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gainbandwidth product," Appl. Phys. Lett., vol. 51, pp. 1454-1456, 1987.
8. Y. K. Jhee, J. C. Campbell, J. F. Ferguson, A. G. Dentai, and W. S. Holden, "Avalanche buildup time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and muitiplication regions," IEEE J. Quantum Electron., vol. QE-22, pp. 753-755, 1986.
9. K. Makita, I. Watanabe, M. Tsuji, and K. Taguchi, "150 GHz GB-product and low dark current InAlGaAs quaternary well superlattice avalanche photodiodes," in Tech. Dig. IOOC'95, paper TuB2-1, 1995, pp. 36-37.
10. R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl. Phys., vol. 78, pp. 4227-4237, 1995.
11. A. R. Hawkins, T. E. Reynolds, D. R. England, D. I. Babic, M. J. Mondry, K. Streubel, and J. E. Bowers, "Silicon hetero-interface photodetector," Appl. Phys. Lett., vol. 68, pp. 3692-3694, 1996.
12. J. N. Hollenhorst, "Frequency response theory for multilayer photodiodes," J. Lightwave Technol., vol. 8, pp. 531-537, 1990.
13. J. C. Campbell, B. C. Johnson, G. J. Qua, and W. T. Tsang, "Frequency response of InP/InGaAsP/InGaAs avalanche photodetectors," J. Lightwave Technol., vol. 7, pp. 778-784, 1989.
14. W. Wu, A. R. Hawkins, and J. E. Bowers, "Frequency response of avalanche photodetectors with separate absorption and multiplication layers," J. Lightwave Technol., vol. 15, pp. 2778-2785, Dec. 1996.
15. G. Kahraman, B. E. A. Saleh, W. L. Sargeant, and M. C. Teich, "Time and frequency response of avalanche photodiodes with arbitrary structure," IEEE Trans. Electron Devices, vol. 39, pp. 553-560, 1992.
16. W. N. Grant, "Electron and hole ionization rates in epitaxial silicon at high electric fields," Solid-state Electron., vol. 16, pp. 1189-1203, 1973.
17. R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, pp. 164-168, 1966.
18. R. Kuvas and C. A. Lee, "Quasistastic approximation for semiconductor avalanche," J. Appl. Phys., vol. 41, pp. 1743-1755,1970.
19. W. Wu, A. R. Hawkins, and J. E. Bowers, "Gain-bandwidth products of avalanche photodetectors," IEEE Photon. Technol. Lett., to be published.
20. P. P. Webb, "Measurement of ionization coefficients in silicon at low electric fields," GE Canada Inc.
21. L. W. Cook, G. E. Bulman, and G. E. Stillman, "Electron and hole ionization coefficients in InP determined by photomultiplication measurements," Appl. Phys. Lett., vol. 40, pp. 589-591, 1982.
22. T. P. Pearsall, "Impact ionization rates for electrons and holes in Ga0.47In0.53As," Appl. Phys. Lett., vol. 36, pp. 218-220, 1980.
23. H. D. Law and C. A. Lee, "Interband scattering effects on secondary ionization coefficients in GaAs," Solid-State Electron., vol. 21, pp. 331-340, 1978.
24. C. A. Lee, R. A. Logan, R. L. Batdorf, J. J. Kleimack, and W. Wiegmann, "Ionization rates of hole and electrons in silicon." Phys. Rev., vol. 134, pp. A761-773, 1964.
25. T. Kaneda, H. Matsumoto, and T. Yamaoka, "A model for reachthrough avalanche photodiodes (RAPD's)," J. Appl. Phys., vol. 47, pp. 3135-3139, 1976.
26. R. J. McIntyre, "Recent developments in silicon avalanche photodiodes," Measurement, vol. 3, pp. 146-152, 1985.
27. A. R. Hawkins, W. Wu, P. Abraham, K. Streubel, and J. E. Bowers, "High gain-bandwidth-product silicon heterointerface photodetector," Appl. Phys. Lett., vol. 70, 1997.