Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

IEEE Photonics Technology Letters

Volumn 13, Issue 8, 2001, Pages 842-844

  Kinsey, G S ^b   Campbell, J C ^b   Dental, A G ^a,c  

^a IEEE

^b The University of Texas at Austin   (United States)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

Avalanche photodiodes; Gain bandwidth product; Noise; Optical fiber devices; Photodetectors; Waveguides

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; FREQUENCY RESPONSE; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SIGNAL NOISE MEASUREMENT;

AVALANCHE PHOTODIODES; GAIN-BANDWIDTH PRODUCT;

PHOTODIODES;

EID: 0035423510     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.935822     Document Type: Article

References (11)

1. 110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55 μm wavelength
2. Traveling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product
3. 65-GHz InGaAs-InAlGaAs-InP waveguide integrated photodetectors for 1.3-1.55 μm wavelength regime
4. Waveguide AlInAs-GaAlInAs avalanche photodiode with a gain-bandwidth product over 160GHz
5. 0.48 As avalanche photodiode
6. 10-Gb/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure
7. 0.53As over the wavelength range 1.0-1.7 μm
8. xAs-InP
9. Multigigabit-per-second avalanche photodiode lightwave receivers
10. Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz