High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector

IEEE Photonics Technology Letters

Volumn 10, Issue 7, 1998, Pages 1012-1014

  Chiu, Yi Jen ^a,b   Fleischer, Siegfried B ^a   Bowers, John E ^a,b  

^a University of California   (United States)

^b IEEE   (United States)

Author keywords

Current distribution; Electrooptic measurements; Low temperature grown GaAs; P i n photodiodes; Photodetector; Semiconductor device; Traveling wave devices; Ultrafast electronics

Indexed keywords

ELECTRIC CURRENT DISTRIBUTION; ELECTROOPTICAL EFFECTS; LOW TEMPERATURE OPERATIONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; ULTRAFAST PHENOMENA;

TRAVELING WAVE PHOTODETECTORS;

PHOTODETECTORS;

EID: 0032122749     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.681301     Document Type: Article

References (11)

1. E. R. Brown, K. A. McIntosh, K. B. Nichols, M. J. Manfra, and C. L. Dennis, "Photomixing up to 3.8 THz in low-temperature-grown GaAs," Appl. Phys. Lett., vol. 66, no. 3, pp. 285-287, 1995.
2. S. Y. Chou, Y. Liu, and W. Khalil, "Ultrafast nanoscale metalsemiconductor-metal photodetectors on bulk and low-temperature grown GaAs," Appl. Phys. Lett., vol. 61, no. 7, pp. 819-821, 1992.
3. R. P. Joshi and J. A. McAdoo, "Picosecond dynamic response of nanoscale low-temperature grown GaAs," Appl. Phys. Lett., vol. 68, no. 14, pp. 1972-1974, 1996.
4. K. S. Giboney, R. L. Nagarajan, T. E. Reynolds, S. T. Allen, R. P. Mirin, M. J. W. Rodwell, and J. E. Bowers, "Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product," IEEE Photon. Technol. Lett., vol. 7, pp. 412-414, Apr. 1995.
5. Y. J. Chiu, S. B. Fleischer, D. Lasaosa, and J. E. Bowers, "Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs," Appl. Phys. Lett., vol. 71, no. 17, pp. 2508-2510, 1997.
6. L. Y. Lin, M. C. Wu, T. Itoh, T. A. Vang, R. E. Muller, D. L. Sivco, and A. Y. Cho, "Velocity-matched distributed photodetectors with high-saturation power and large bandwidth," IEEE Photon. Technol. Lett., vol. 8, pp. 1376-1378, Oct. 1996.
7. T. Itatani, T. Nakagawa, F. Kano, K. Ohta, and Y. Sugiyama, IEICE Trans. Electron., vol. E78-C, no. 1, pp. 73-79, 1995.
8. V. M. Hietala, A. Vawter, T. M. Brennan, and B. E. Hammons, "Traveling-wave photodetectors for high-power, large-bandwidth application," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2291-2298, Sept. 1995.
9. K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Traveling-wave photodetector design and measurements," IEEE J. Select. Topics Quantum Electron., vol. 2, pp. 622-629, Sept. 1996.
10. T. S. Sosnowski, T. B. Norris, H. H. Wang, P. Grenier, and J. F. Whitaker, "High-carrier-density electron dynamics in low-temperature-grown GaAs," Appl. Phys. Lett., vol. 70, no. 24, 1997.
11. E. H. Bottcher, and D. Bimberg, "Millimeter wave distributed metal-semiconductor-metal photodetectors," Appl. Phys. Lett., vol. 66, no. 26, 1995.