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1
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0036649712
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Optimization of 10 Gb/s, long wavelength floating guard ring InGaAs/InP avalanche photodiodes
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July; to be published
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J. Wei, J. C. Dries, M. L. Lange, H. Wang, G.H. Olsen, and S. R. Forrest, "Optimization of 10 Gb/s, long wavelength floating guard ring InGaAs/InP avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 14, pp. 977-979, July 2002, to be published.
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IEEE Photon. Technol. Lett.
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Wei, J.1
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Wang, H.4
Olsen, G.H.5
Forrest, S.R.6
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2
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0035423510
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Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz
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Aug.
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G. C. Kinsey, J. C. Campbell, and A. G. Dentai, "Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz," IEEE Photon. Technol. Lett., vol. 13, pp. 842-844, Aug. 2001.
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Kinsey, G.C.1
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3
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0034314963
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10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure
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T. Nakata, T. Takeuchi, I. Watanabe, K. Makita, and T. Torikai, "10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure," Electron. Lett., vol. 36. no. 24, pp. 2033-2034, 2000.
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Electron. Lett.
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Nakata, T.1
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Makita, K.4
Torikai, T.5
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4
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0035651896
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High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers
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T. Nakata, T. Takeuchi, K. Makita, and T. Torikai, "High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers," in Proc. LEOS'01, La Jolla, CA, Nov. 2001, pp. 770-771.
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Proc. LEOS'01, La Jolla, CA, Nov. 2001
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Nakata, T.1
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Makita, K.3
Torikai, T.4
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5
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0031200470
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Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160 GHz
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C. Cohen-Jonathan, L. Giraudet, A. Bonzo, and J. P. Praseuth, "Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160 GHz," Electron. Lett., vol. 33, no. 17, pp. 1492-1493, 1997.
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6
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0035424997
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An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler
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Aug.
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F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol. 13, pp. 845-847, Aug. 2001.
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IEEE Photon. Technol. Lett.
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Xia, F.1
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Lin, W.6
Forrest, S.R.7
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8
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0033895072
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Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses
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Feb.
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P. Yuan, C. C. Hansing, K. A. Anselm, C. V. Lenox, H. Nie, A. L. Holmes, Jr., B. G. Streetman, and J. C. Campbell, "Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses," IEEE J. Quantum Electron., vol. 36, pp. 198-204, Feb. 2000.
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Yuan, P.1
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Holmes A.L., Jr.6
Streetman, B.G.7
Campbell, J.C.8
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9
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0032621622
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A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensation InGaAs quantum wells
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J. C. Dries, M. R. Cokhale, and S. R. Forrest, "A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensation InGaAs quantum wells," Appl. Phys. Lett., vol. 74, pp. 2581-2583, 1999.
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Dries, J.C.1
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10
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0035363839
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Monolithic integration of an all-optical Mach-Zehnder demultiplexer using an asymmetric twin-waveguide structure
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June
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P. V. Studenkov, M. R. Gokhale, J. Wei, W. Lin, I. Glesk, P. R. Prucnal, and S. R. Forrest, "Monolithic integration of an all-optical Mach-Zehnder demultiplexer using an asymmetric twin-waveguide structure," IEEE Photon. Technol. Lett., vol. 13, pp. 600-502, June 2001.
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(2001)
IEEE Photon. Technol. Lett.
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Studenkov, P.V.1
Gokhale, M.R.2
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Prucnal, P.R.6
Forrest, S.R.7
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