Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region

IEEE Photonics Technology Letters

Volumn 13, Issue 12, 2001, Pages 1346-1348

  Wang, S ^a   Sidhu, R ^a   Zheng, X G ^a   Li, X ^a   Sun, X ^a   Holmes A L , Jr ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Avalanche photodiodes; Impact ionization; Photodetectors

Indexed keywords

FIBER OPTICS; IMPACT IONIZATION; PHOTODETECTORS; PHOTODIODES;

AVALANCHE PHOTODIODES (APD);

AVALANCHE DIODES;

EID: 0035678160     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.969903     Document Type: Article

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