AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 133-135

  Nguyen, Chanh ^a,b   Liu, Takyiu ^b   Chen, Mary ^b   Sun, Hsiang Chih ^b   Rensch, David ^b  

^a IEEE

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ENERGY GAP; HOT CARRIERS; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SUPERLATTICES;

BASE COLLECTOR JUNCTION; DOPING BAND OFFSET; DOPING DIPOLE; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; HOT ELECTRONS; QUASIELECTRIC FIELD;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030109380     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485191     Document Type: Article

References (11)

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