A 12 × 12 In 0.53Ga 0.47 As-In 0.52Al 0.48 As avalanche photodiode array

IEEE Journal of Quantum Electronics

Volumn 38, Issue 11, 2002, Pages 1536-1540

  Zheng, X G ^b   Hsu, J S ^b   Sun, X ^a,b   Hurst, J B ^b   Li, X ^b   Wang, S ^a,b   Holmes Jr , Archie L ^a,b   Campbell, Joe C ^a,b   Huntington, Andrew S ^c   Coldren, Larry A ^a,c  

^a IEEE   (United States)

^b The University of Texas at Austin   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODIODE ARRAY; DARK CURRENT; INDIUM ALUMINUM ARSENIDE; OPTICAL CAVITY MEASUREMENT;

AVALANCHE DIODES; ELECTRIC BREAKDOWN; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; X RAY DIFFRACTION ANALYSIS;

PHOTODIODES;

EID: 0036851357     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.804297     Document Type: Article

References (12)

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