Bandwidth characteristics of InP/InGaAs uni-traveling-carrier photodiodes

Proceedings of the International Topical Meeting on Microwave Photonics, MWP, Technical Digest

Volumn , Issue , 1998, Pages 193-194

  Shimizu, Naofumi ^a   Watanabe, Noriyuki ^a   Furuta, Tomofumi ^a   Ishibashi, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CARRIER MOBILITY; DIFFUSION IN SOLIDS; ELECTRON TRANSPORT PROPERTIES; ELECTROOPTICAL EFFECTS; LIGHT ABSORPTION; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

UNI TRAVELING CARRIER PHOTODIODES;

PHOTODIODES;

EID: 0032284876     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)