High-responsivity and high-speed evanescently-coupled avalanche photodiodes

Electronics Letters

Volumn 39, Issue 25, 2003, Pages 1848-1849

  Demiguel, S ^a   Zheng, Xiaoguang ^a   Li, Ning ^a   Li, Xiaowei ^a   Campbell, J C ^a   Decobert, J ^b   Tscherptner, N ^b   Anselm, A ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c APPLIED OPTOELECTRONICS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; EPITAXIAL GROWTH; HETEROJUNCTIONS; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

AVALANCHE PHOTODIODE; LOW PRESSURE METAL ORGANIC VAPOUR PHASE EPITAXY; OPTICAL MATCHING LAYER; PLANAR SHORT MULTIMODE WAVEGUIDE;

PHOTODIODES;

EID: 0347022677     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031182     Document Type: Article

References (5)

1. Cohen-Jonathan, C., et al.: 'Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160 GHz', Electron. Lett., 1997, 33, (17), pp. 1492-1493
2. Nakata, T., et al.: 'High-speed and high-sensitivity waveguide InAlAs avalanche photodiode for 10-40 Gb/s receivers'. Proc. LEOS'01, San Diego, USA, November 2001, Paper ThN3, pp. 770-771.
3. Kinsey, G.S., Campbell, J.C., and Dental, A.G.: 'Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz', IEEE Photonics Technol. Lett., 2001, 13, (8), pp. 842-844
4. Wei, J., Xia, F., and Forest, S.R.: 'A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode', IEEE Photonics Technol. Lett., 2002, 14, (11), pp. 1590-1592
5. Demiguel, S., et al.: 'Very high-responsivity evanescently-coupled photodiodes integrating a short planar multimode waveguide for high-speed applications', IEEE Photonics Technol. Lett., 2003, 15, (12)