High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2001, Pages 770-771

  Nakata, T ^a   Takeuchi, T ^a   Makita, K ^a   Torikai, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; BIT ERROR RATE; CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTING INDIUM COMPOUNDS; SENSITIVITY ANALYSIS; SIGNAL RECEIVERS; WAVEGUIDES;

AVALANCHE PHOTODIODES (APD);

PHOTODIODES;

EID: 0035651896     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)