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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 1 A/B, 2004, Pages

Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH4 Plasmas

(6) Ohta, Takayuki a Ishida, Tetsuro a Hori, Masaru a Goto, Toshio a Ito, Masafumi b Kawakami, Satoru c

a NAGOYA UNIVERSITY (Japan)

b WAKAYAMA UNIVERSITY (Japan)

c TOKYO ELECTRON LTD (Japan)

Author keywords

Si; Translational temperature; UVAS; Very high frequency capacitively coupled plasma

Indexed keywords

ABSORPTION SPECTROSCOPY; ARGON; CARRIER CONCENTRATION; CATHODES; HIGH TEMPERATURE EFFECTS; LIGHT EMISSION; NATURAL GAS; SILANES; THIN FILM TRANSISTORS; ULTRAVIOLET SPECTROSCOPY;

TRANSLATIONAL TEMPERATURE; UVAS; VERY HIGH FREQUENCY CAPACITIVELY COUPLED PLASMAS;

PLASMAS;

EID: 1842759610 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L94 Document Type: Article

Times cited : (3)

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